Influence of Additive N(2) on O(2) Plasma Ashing Process in Inductively Coupled Plasma

One of the cleaning processes in semiconductor fabrication is the ashing process using oxygen plasma, which has been normally used N(2) gas as additive gas to increase the ashing rate, and it is known that the ashing rate is strongly related to the concentration of oxygen radicals measured OES. However, by performing a comprehensive experiment of the O(2) plasma ashing process in various N(2)/O(2) mixing ratios and RF powers, our investigation revealed that the tendency of the density measured using only OES did not exactly match the ashing rate. This problematic issue can be solved by considering the plasma parameter, such as electron density. This study can suggest a method inferring the exact maximum condition of the ashing rate based on the plasma diagnostics such as OES, Langmuir probe, and cutoff probe, which might be useful for the next-generation plasma process.