Metal-Semiconductor AsSb-Al(0.6)Ga(0.4)As(0.97)Sb(0.03) Metamaterial

AlGaAsSb and AlGaAs films as thick as 1 μm with Al content as high as 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a high aluminum content and a low growth temperature, we applied intermittent growth with the temperature...

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Detalles Bibliográficos
Autores principales: Bert, Nikolay, Ushanov, Vitaliy, Snigirev, Leonid, Kirilenko, Demid, Ulin, Vladimir, Yagovkina, Maria, Preobrazhenskii, Valeriy, Putyato, Mikhail, Semyagin, Boris, Kasatkin, Igor, Chaldyshev, Vladimir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658577/
https://www.ncbi.nlm.nih.gov/pubmed/36363189
http://dx.doi.org/10.3390/ma15217597

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9658577/
https://www.ncbi.nlm.nih.gov/pubmed/36363189
http://dx.doi.org/10.3390/ma15217597

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