High frequency characterization of Si[Formula: see text] N[Formula: see text] dielectrics for artificial magnetoelectric devices

Charge mediated magnetoelectric coupling mechanism in artificial multiferroics originates from interfacial charge modulation or ionic movement at a magnetic/dielectric interface. Despite the existence of several dielectric/ferroelectric systems that can be used in charge mediated artificial multifer...

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Detalles Bibliográficos
Autores principales: Vijayakumar, Jaianth, Gaspar, Marcos, Maurel, Laura, Horisberger, Michael, Nolting, Frithjof, Vaz, C. A. F.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Electronic Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9663356/
https://www.ncbi.nlm.nih.gov/pubmed/36398095
http://dx.doi.org/10.1007/s10853-022-07832-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9663356/
https://www.ncbi.nlm.nih.gov/pubmed/36398095
http://dx.doi.org/10.1007/s10853-022-07832-2

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