High frequency characterization of Si[Formula: see text] N[Formula: see text] dielectrics for artificial magnetoelectric devices

Charge mediated magnetoelectric coupling mechanism in artificial multiferroics originates from interfacial charge modulation or ionic movement at a magnetic/dielectric interface. Despite the existence of several dielectric/ferroelectric systems that can be used in charge mediated artificial multiferroic systems, producing suitable systems with fast time responses still remains a challenge. Here we characterize the frequency response of stoichiometric and non-stoichiometric (low strain) Si[Formula: see text] N[Formula: see text] thin film membranes, which can potentially be used as the dielectric layer in magnetoelectric devices, to determine the impact of depletion layers, charge traps and defect mobility on the high frequency (up to 100 MHz) interfacial charge modulation via screening. We find that the dielectric/magnetoelectric properties are largely dominated by extrinsic doping due to point defects. In particular, we find that non-stoichiometric Si[Formula: see text] N[Formula: see text] has a dielectric behaviour that is dominated by charge traps and/or mobile ions. However, stoichiometric Si[Formula: see text] N[Formula: see text] membranes show a reversible response to the applied bias electric field consistent with a doped semiconductor behaviour; at high frequencies, the intrinsic dielectric behaviour is reached, indicating that it may be suitable for high frequency magnetoelectric device applications. Our results show that minimising the impact of defects on the dielectric properties of magnetoelectric heterostructures is an important prerequisite for obtaining a high frequency magnetoelectric response. SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s10853-022-07832-2.