Heteroepitaxial Growth of an Ultrathin β-Ga(2)O(3) Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling

[Image: see text] β-Gallium oxide (Ga(2)O(3)) has received intensive attention in the scientific community as a significant high-power switching semiconductor material because of its remarkable intrinsic physical characteristics and growth stability. This work reports the heteroepitaxial growth of t...

Descripción completa

Detalles Bibliográficos
Autores principales: Mondal, Abhay Kumar, Deivasigamani, Revathy, Ping, Loh Kean, Shazni Mohammad Haniff, Muhammad Aniq, Goh, Boon Tong, Horng, Ray Hua, Mohamed, Mohd Ambri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670264/
https://www.ncbi.nlm.nih.gov/pubmed/36406506
http://dx.doi.org/10.1021/acsomega.2c04888

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670264/
https://www.ncbi.nlm.nih.gov/pubmed/36406506
http://dx.doi.org/10.1021/acsomega.2c04888

Ejemplares similares