Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

[Image: see text] Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar...

Descripción completa

Detalles Bibliográficos
Autores principales: Xie, Luxiao, Zhang, Hui, Xie, Xinjian, Wang, Endong, Lin, Xiangyu, Song, Yuxuan, Liu, Guodong, Chen, Guifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670715/
https://www.ncbi.nlm.nih.gov/pubmed/36406487
http://dx.doi.org/10.1021/acsomega.2c04626

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670715/
https://www.ncbi.nlm.nih.gov/pubmed/36406487
http://dx.doi.org/10.1021/acsomega.2c04626

Ejemplares similares