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Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

[Image: see text] Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar...

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Autores principales: Xie, Luxiao, Zhang, Hui, Xie, Xinjian, Wang, Endong, Lin, Xiangyu, Song, Yuxuan, Liu, Guodong, Chen, Guifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670715/
https://www.ncbi.nlm.nih.gov/pubmed/36406487
http://dx.doi.org/10.1021/acsomega.2c04626
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author Xie, Luxiao
Zhang, Hui
Xie, Xinjian
Wang, Endong
Lin, Xiangyu
Song, Yuxuan
Liu, Guodong
Chen, Guifeng
author_facet Xie, Luxiao
Zhang, Hui
Xie, Xinjian
Wang, Endong
Lin, Xiangyu
Song, Yuxuan
Liu, Guodong
Chen, Guifeng
author_sort Xie, Luxiao
collection PubMed
description [Image: see text] Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar FWHM values of (0002) and (101̅2) planes will have a huge advantage over other preparation methods such as MOCVD. From the cross-sectional TEM images of the AlN sample, it is found that the fusion of a large number of a + c type dislocations occur at the interface of the low temperature buffer layer and the epitaxial layer, which affects the growth mode of the epitaxial layer. The lower FHWM value of the E(2)(high) peak of the Raman spectrum, the lower the point defect concentration, which made the sample gain higher energy defect emission bands in the PL spectra and higher transmittance in the UV–vis transmission spectrum.
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spelling pubmed-96707152022-11-18 Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy Xie, Luxiao Zhang, Hui Xie, Xinjian Wang, Endong Lin, Xiangyu Song, Yuxuan Liu, Guodong Chen, Guifeng ACS Omega [Image: see text] Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar FWHM values of (0002) and (101̅2) planes will have a huge advantage over other preparation methods such as MOCVD. From the cross-sectional TEM images of the AlN sample, it is found that the fusion of a large number of a + c type dislocations occur at the interface of the low temperature buffer layer and the epitaxial layer, which affects the growth mode of the epitaxial layer. The lower FHWM value of the E(2)(high) peak of the Raman spectrum, the lower the point defect concentration, which made the sample gain higher energy defect emission bands in the PL spectra and higher transmittance in the UV–vis transmission spectrum. American Chemical Society 2022-11-03 /pmc/articles/PMC9670715/ /pubmed/36406487 http://dx.doi.org/10.1021/acsomega.2c04626 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Xie, Luxiao
Zhang, Hui
Xie, Xinjian
Wang, Endong
Lin, Xiangyu
Song, Yuxuan
Liu, Guodong
Chen, Guifeng
Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title_full Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title_fullStr Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title_full_unstemmed Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title_short Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
title_sort impact of defects for aln single crystal thin film by metal nitride vapor phase epitaxy
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670715/
https://www.ncbi.nlm.nih.gov/pubmed/36406487
http://dx.doi.org/10.1021/acsomega.2c04626
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