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Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy

[Image: see text] Herein, the defect-related properties of an AlN sample prepared based on the optimal process parameters by metal nitride vapor phase epitaxy (MNVPE) were investigated. The FWHM values of the (0002)/(101̅2) planes of the sample by MNVPE are 397/422 arcsec; the advantages of similar...

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Detalles Bibliográficos
Autores principales:	Xie, Luxiao, Zhang, Hui, Xie, Xinjian, Wang, Endong, Lin, Xiangyu, Song, Yuxuan, Liu, Guodong, Chen, Guifeng
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2022
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9670715/ https://www.ncbi.nlm.nih.gov/pubmed/36406487 http://dx.doi.org/10.1021/acsomega.2c04626

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