Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure

The oxygen vacancies and hydrogen in oxide semiconductors are regarded as the primary sources of charge carriers and various studies have investigated the effect of hydrogen on the properties of oxide semiconductors. However, the carrier generation mechanism between hydrogen and oxygen vacancies in...

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Detalles Bibliográficos
Autores principales: Noh, Hee Yeon, Lee, Woo-Geun, G. R., Haripriya, Cha, Jung-Hwa, Kim, June-Seo, Yun, Won Seok, Lee, Myoung-Jae, Lee, Hyeon-Jun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672038/
https://www.ncbi.nlm.nih.gov/pubmed/36396967
http://dx.doi.org/10.1038/s41598-022-24212-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672038/
https://www.ncbi.nlm.nih.gov/pubmed/36396967
http://dx.doi.org/10.1038/s41598-022-24212-7

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