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Hydrogen diffusion and its electrical properties variation as a function of the IGZO stacking structure
The oxygen vacancies and hydrogen in oxide semiconductors are regarded as the primary sources of charge carriers and various studies have investigated the effect of hydrogen on the properties of oxide semiconductors. However, the carrier generation mechanism between hydrogen and oxygen vacancies in...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672038/ https://www.ncbi.nlm.nih.gov/pubmed/36396967 http://dx.doi.org/10.1038/s41598-022-24212-7 |