Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water

As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely used for the preparation of various materials in the fields of microelectronics, energy and catalysis. As a high-κ gate dielectric to replace SiO(2), zirconium oxide (ZrO(2)) has been prepared through the ALD metho...

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Detalles Bibliográficos
Autores principales: Xu, Rui, Zhou, Zhongchao, Li, Jing, Zhang, Xu, Zhu, Yuanyuan, Xiao, Hongping, Xu, Lina, Ding, Yihong, Li, Aidong, Fang, Guoyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672480/
https://www.ncbi.nlm.nih.gov/pubmed/36405315
http://dx.doi.org/10.3389/fchem.2022.1035902

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672480/
https://www.ncbi.nlm.nih.gov/pubmed/36405315
http://dx.doi.org/10.3389/fchem.2022.1035902

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