Cargando…
Reaction mechanism of atomic layer deposition of zirconium oxide using zirconium precursors bearing amino ligands and water
As a unique nanofabrication technology, atomic layer deposition (ALD) has been widely used for the preparation of various materials in the fields of microelectronics, energy and catalysis. As a high-κ gate dielectric to replace SiO(2), zirconium oxide (ZrO(2)) has been prepared through the ALD metho...
| Autores principales: | , , , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Frontiers Media S.A.
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9672480/ https://www.ncbi.nlm.nih.gov/pubmed/36405315 http://dx.doi.org/10.3389/fchem.2022.1035902 |