Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices

Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)(2)SnI(4) by incorporating SnI(4) in the precursor solutions. We detail steps for p...

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Detalles Bibliográficos
Autores principales: Liu, Yu, Chen, Ping-An, Qiu, Xincan, Guo, Jing, Xia, Jiangnan, Wei, Huan, Xie, Haihong, Hou, Shijin, He, Mai, Wang, Xiao, Zeng, Zebing, Jiang, Lang, Liao, Lei, Hu, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2022
Materias:
Protocol
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9679674/
https://www.ncbi.nlm.nih.gov/pubmed/36595949
http://dx.doi.org/10.1016/j.xpro.2022.101876

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9679674/
https://www.ncbi.nlm.nih.gov/pubmed/36595949
http://dx.doi.org/10.1016/j.xpro.2022.101876

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