Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices

Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)(2)SnI(4) by incorporating SnI(4) in the precursor solutions. We detail steps for preparation of field-effect transistors (FETs) and thermoelectric devices (TEs) based on SnI(4)-doped (PEA)(2)SnI(4) films. We further describe characterization via conductivity measurement using the four-point probe method, FETs performance, and TEs performance measurements. For complete details on the use and execution of this protocol, please refer to Liu et al. (2022).(1)