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Protocol for doping of an Sn-based two-dimensional perovskite semiconductor by incorporating SnI(4) for field-effect transistors and thermoelectric devices
Doping is an important technique for semiconductor materials, yet effective and controllable doping of organic-inorganic halide perovskites is still a challenge. Here, we present a protocol to dope 2D perovskite (PEA)(2)SnI(4) by incorporating SnI(4) in the precursor solutions. We detail steps for p...
Autores principales: | Liu, Yu, Chen, Ping-An, Qiu, Xincan, Guo, Jing, Xia, Jiangnan, Wei, Huan, Xie, Haihong, Hou, Shijin, He, Mai, Wang, Xiao, Zeng, Zebing, Jiang, Lang, Liao, Lei, Hu, Yuanyuan |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9679674/ https://www.ncbi.nlm.nih.gov/pubmed/36595949 http://dx.doi.org/10.1016/j.xpro.2022.101876 |
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