Uniform self-rectifying resistive random-access memory based on an MXene-TiO(2) Schottky junction

For filamentary resistive random-access memory (RRAM) devices, the switching behavior between different resistance states usually occurs abruptly, while the random formation of conductive filaments usually results in large fluctuations in resistance states, leading to poor uniformity. Schottky barri...

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Detalles Bibliográficos
Autores principales: Zang, Chao, Li, Bo, Sun, Yun, Feng, Shun, Wang, Xin-Zhe, Wang, Xiaohui, Sun, Dong-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9680946/
https://www.ncbi.nlm.nih.gov/pubmed/36504734
http://dx.doi.org/10.1039/d2na00281g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9680946/
https://www.ncbi.nlm.nih.gov/pubmed/36504734
http://dx.doi.org/10.1039/d2na00281g

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