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Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor

The advent of memristors and the continuing research and development in the field of brain-inspired computing could allow realization of a veritable “thinking machine”. In this study, ZnO-based memristors were fabricated using a radio frequency magnetron sputtering method. The ZnO oxide layer was pr...

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Detalles Bibliográficos
Autores principales: Huang, Yong, Yu, Jiahao, Kong, Yu, Wang, Xiaoqiu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9682621/
https://www.ncbi.nlm.nih.gov/pubmed/36505707
http://dx.doi.org/10.1039/d2ra05483c