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Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor
The advent of memristors and the continuing research and development in the field of brain-inspired computing could allow realization of a veritable “thinking machine”. In this study, ZnO-based memristors were fabricated using a radio frequency magnetron sputtering method. The ZnO oxide layer was pr...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9682621/ https://www.ncbi.nlm.nih.gov/pubmed/36505707 http://dx.doi.org/10.1039/d2ra05483c |