Controlling the Formation of Conductive Pathways in Memristive Devices

Resistive random‐access memories are promising candidates for novel computer architectures such as in‐memory computing, multilevel data storage, and neuromorphics. Their working principle is based on electrically stimulated materials changes that allow access to two (digital), multiple (multilevel),...

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Detalles Bibliográficos
Autores principales: Winkler, Robert, Zintler, Alexander, Petzold, Stefan, Piros, Eszter, Kaiser, Nico, Vogel, Tobias, Nasiou, Déspina, McKenna, Keith P., Molina‐Luna, Leopoldo, Alff, Lambert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2022
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9685438/
https://www.ncbi.nlm.nih.gov/pubmed/36073844
http://dx.doi.org/10.1002/advs.202201806

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9685438/
https://www.ncbi.nlm.nih.gov/pubmed/36073844
http://dx.doi.org/10.1002/advs.202201806

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