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Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates
[Image: see text] The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are criti...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9686134/ https://www.ncbi.nlm.nih.gov/pubmed/36439398 http://dx.doi.org/10.1021/acsaelm.2c00989 |