Cargando…
Impact of Polymer-Assisted Epitaxial Graphene Growth on Various Types of SiC Substrates
[Image: see text] The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been the focus of research over the past few years. However, besides the standard growth parameters, the influence of the substrate pretreatment and properties of the underlying SiC wafer are criti...
Autores principales: | Chatterjee, Atasi, Kruskopf, Mattias, Wundrack, Stefan, Hinze, Peter, Pierz, Klaus, Stosch, Rainer, Scherer, Hansjoerg |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2022
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9686134/ https://www.ncbi.nlm.nih.gov/pubmed/36439398 http://dx.doi.org/10.1021/acsaelm.2c00989 |
Ejemplares similares
-
Epitaxial graphene for quantum resistance metrology
por: Kruskopf, Mattias, et al.
Publicado: (2018) -
Multidimensional characterization, Landau levels and Density of States in epitaxial graphene grown on SiC substrates
por: Camara, Nicolas, et al.
Publicado: (2011) -
Investigation of structural and electronic properties of epitaxial graphene on 3C–SiC(100)/Si(100) substrates
por: Gogneau, Noelle, et al.
Publicado: (2014) -
SiC surface orientation and Si loss rate effects on epitaxial graphene
por: Kim, Moonkyung, et al.
Publicado: (2012) -
Energy Harvesting of Deionized Water Droplet Flow over an Epitaxial Graphene Film on a SiC Substrate
por: Ohno, Yasuhide, et al.
Publicado: (2023)