Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO(2)-Based FeFETs for In-Memory-Computing Applications

[Image: see text] This article reports an improvement in the performance of the hafnium oxide-based (HfO(2)) ferroelectric field-effect transistors (FeFET) achieved by a synergistic approach of interfacial layer (IL) engineering and READ-voltage optimization. FeFET devices with silicon dioxide (SiO(...

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Detalles Bibliográficos
Autores principales: Raffel, Yannick, De, Sourav, Lederer, Maximilian, Olivo, Ricardo Revello, Hoffmann, Raik, Thunder, Sunanda, Pirro, Luca, Beyer, Sven, Chohan, Talha, Kämpfe, Thomas, Seidel, Konrad, Heitmann, Johannes
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9686141/
https://www.ncbi.nlm.nih.gov/pubmed/36439397
http://dx.doi.org/10.1021/acsaelm.2c00771

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9686141/
https://www.ncbi.nlm.nih.gov/pubmed/36439397
http://dx.doi.org/10.1021/acsaelm.2c00771

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