Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique

A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge structure, providing the heterogeneous channels fo...

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Detalles Bibliográficos
Autores principales: Tang, Xiaoyu, Hua, Tao, Liu, Yujie, Han, Zhezhe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9692264/
https://www.ncbi.nlm.nih.gov/pubmed/36363829
http://dx.doi.org/10.3390/mi13111806

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9692264/
https://www.ncbi.nlm.nih.gov/pubmed/36363829
http://dx.doi.org/10.3390/mi13111806

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