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Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique

A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge structure, providing the heterogeneous channels fo...

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Detalles Bibliográficos
Autores principales: Tang, Xiaoyu, Hua, Tao, Liu, Yujie, Han, Zhezhe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9692264/
https://www.ncbi.nlm.nih.gov/pubmed/36363829
http://dx.doi.org/10.3390/mi13111806
Descripción
Sumario:A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge structure, providing the heterogeneous channels for CMOS integration. Superior transistor characteristics were achieved by optimizing the InGaAs gate oxide with a self-cleaning process in atomic layer deposition, and modifying the Ge gate oxide by the ozone post oxidation (OPO) technique, in the sequential two-step gate oxide fabrication process. With the combination of the gate-first fabrication process, superior on- and off-state characteristics, i.e., on current up to 8.3 µA/μm and leakage as low as 10(−)(6) µA/μm, have been demonstrated in the integrated MOSFETs, together with the preferable symmetric output characteristics that promises excellent CMOS performances.