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Heterogeneous CMOS Integration of InGaAs-OI nMOSFETs and Ge pMOSFETs Based on Dual-Gate Oxide Technique
A compatible fabrication technology for integrating InGaAs nMOSFETs and Ge pMOSFETs is developed based on the development of the two-step gate oxide fabrication strategy. The direct wafer bonding method was utilized to obtain the InGaAs-Insulator-Ge structure, providing the heterogeneous channels fo...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9692264/ https://www.ncbi.nlm.nih.gov/pubmed/36363829 http://dx.doi.org/10.3390/mi13111806 |