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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...

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Detalles Bibliográficos
Autores principales: Alathbah, Moath, Elgaid, Khaled
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694052/
https://www.ncbi.nlm.nih.gov/pubmed/36422436
http://dx.doi.org/10.3390/mi13112007