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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694052/ https://www.ncbi.nlm.nih.gov/pubmed/36422436 http://dx.doi.org/10.3390/mi13112007 |
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author | Alathbah, Moath Elgaid, Khaled |
author_facet | Alathbah, Moath Elgaid, Khaled |
author_sort | Alathbah, Moath |
collection | PubMed |
description | In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance. |
format | Online Article Text |
id | pubmed-9694052 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96940522022-11-26 Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation Alathbah, Moath Elgaid, Khaled Micromachines (Basel) Article In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. An alternative technique is the use of ion implantation for device isolation instead of conventional mesa for a planar device formation. However, ion implantation is a costly process and not always easily accessible. In this work, the proposed method is to simply extend the mesa below the gate just enough to accommodate the gatefeed, thereby ensuring the entire gate is planar in structure up to the gatefeed. The newly developed device exhibited no compromise to the DC (direct current) and RF (radio frequency) performance. Conversely, it produced a planar gate configuration with an enhanced DC transconductance (approximately 20% increase is observed) and a lower gate leakage while the etch process is considerably simplified. Similarly, the RF transconductance of proposed device (device B) increased by 80% leading to considerable improvements in RF performance. MDPI 2022-11-18 /pmc/articles/PMC9694052/ /pubmed/36422436 http://dx.doi.org/10.3390/mi13112007 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Alathbah, Moath Elgaid, Khaled Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title | Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title_full | Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title_fullStr | Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title_full_unstemmed | Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title_short | Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation |
title_sort | miniature mesa extension for a planar submicron algan/gan hemt gate formation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694052/ https://www.ncbi.nlm.nih.gov/pubmed/36422436 http://dx.doi.org/10.3390/mi13112007 |
work_keys_str_mv | AT alathbahmoath miniaturemesaextensionforaplanarsubmicronalganganhemtgateformation AT elgaidkhaled miniaturemesaextensionforaplanarsubmicronalganganhemtgateformation |