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Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694052/ https://www.ncbi.nlm.nih.gov/pubmed/36422436 http://dx.doi.org/10.3390/mi13112007 |