Hyper-FET’s Phase-Transition-Materials Design Guidelines for Ultra-Low Power Applications at 3 nm Technology Node

In this work, a hybrid-phase transition field-effects-transistor (hyper-FET) integrated with phase-transition materials (PTM) and a multi-nanosheet FET (mNS-FET) at the 3 nm technology node were analyzed at the device and circuit level. Through this, a benchmark was performed for presenting device d...

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Detalles Bibliográficos
Autores principales: Jung, Hanggyo, Chang, Jeesoo, Yoo, Changhyun, Oh, Jooyoung, Choi, Sumin, Song, Juyeong, Jeon, Jongwook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694141/
https://www.ncbi.nlm.nih.gov/pubmed/36432381
http://dx.doi.org/10.3390/nano12224096

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694141/
https://www.ncbi.nlm.nih.gov/pubmed/36432381
http://dx.doi.org/10.3390/nano12224096

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