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Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process
Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, tw...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694645/ https://www.ncbi.nlm.nih.gov/pubmed/36363891 http://dx.doi.org/10.3390/mi13111869 |
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author | Guo, Yaozu Ma, Haolan Lan, Jiang Liao, Yiming Ji, Xiaoli |
author_facet | Guo, Yaozu Ma, Haolan Lan, Jiang Liao, Yiming Ji, Xiaoli |
author_sort | Guo, Yaozu |
collection | PubMed |
description | Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 10(9) cmHz(1/2)/W at 25 μA and a maximum of 6.2 × 10(8) cmHz(1/2)/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption. |
format | Online Article Text |
id | pubmed-9694645 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96946452022-11-26 Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process Guo, Yaozu Ma, Haolan Lan, Jiang Liao, Yiming Ji, Xiaoli Micromachines (Basel) Article Microbolometers based on the CMOS process has the important advantage of being automatically merged with circuits in the fabrication of larger arrays, but they typically suffer from low detectivity due to the difficulty in realizing high-sensitivity thermistors in the CMOS process. In this paper, two resistive microbolometers based on polysilicon and metal Al thermistors, respectively, are designed and fabricated by the standard CMOS process. Experimental results show that the detectivity of the two resistive microbolometers can reach a maximum of 1.78 × 10(9) cmHz(1/2)/W at 25 μA and a maximum of 6.2 × 10(8) cmHz(1/2)/W at 267 μA. The polysilicon microbolometer exhibits better detectivity at lower bias current due to its lower effective thermal conductivity and larger resistance. Even though the thermal time constant of the polysilicon thermistor is three times slower than that of the metal Al thermistor, the former is more suitable for designing a thermal imaging system with sensitive and low power consumption. MDPI 2022-10-30 /pmc/articles/PMC9694645/ /pubmed/36363891 http://dx.doi.org/10.3390/mi13111869 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Guo, Yaozu Ma, Haolan Lan, Jiang Liao, Yiming Ji, Xiaoli Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title_full | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title_fullStr | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title_full_unstemmed | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title_short | Impact of Various Thermistors on the Properties of Resistive Microbolometers Fabricated by CMOS Process |
title_sort | impact of various thermistors on the properties of resistive microbolometers fabricated by cmos process |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9694645/ https://www.ncbi.nlm.nih.gov/pubmed/36363891 http://dx.doi.org/10.3390/mi13111869 |
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