Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature

We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO(2) substrates by magnetron sputtering deposition to regulate t...

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Detalles Bibliográficos
Autores principales: Yan, Xingzhen, Song, Kaian, Li, Bo, Zhang, Yiqiang, Yang, Fan, Wang, Yanjie, Wang, Chao, Chi, Yaodan, Yang, Xiaotian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695354/
https://www.ncbi.nlm.nih.gov/pubmed/36422452
http://dx.doi.org/10.3390/mi13112024

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695354/
https://www.ncbi.nlm.nih.gov/pubmed/36422452
http://dx.doi.org/10.3390/mi13112024

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