Cargando…
Performance Enhancement for Indium-Free Metal Oxide Thin-Film Transistors with Double-Active-Layers by Magnetron Sputtering at Room Temperature
We prepared an indium-free metal oxide thin-film transistor (TFT) using a double-active-layers structure at room temperature. We changed the growth sequence of Al-doped zinc oxide (AZO) and zinc oxide (ZnO) double-active-layers on Si/SiO(2) substrates by magnetron sputtering deposition to regulate t...
Autores principales: | Yan, Xingzhen, Song, Kaian, Li, Bo, Zhang, Yiqiang, Yang, Fan, Wang, Yanjie, Wang, Chao, Chi, Yaodan, Yang, Xiaotian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695354/ https://www.ncbi.nlm.nih.gov/pubmed/36422452 http://dx.doi.org/10.3390/mi13112024 |
Ejemplares similares
-
Effect of Channel Shape on Performance of Printed Indium Gallium Zinc Oxide Thin-Film Transistors
por: Yan, Xingzhen, et al.
Publicado: (2023) -
Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns
por: Yan, Xingzhen, et al.
Publicado: (2022) -
A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
por: Duan, Xinlv, et al.
Publicado: (2022) -
Fabrication of black aluminium thin films by magnetron sputtering
por: More-Chevalier, J., et al.
Publicado: (2020) -
Indium-Zinc-Tin-Oxide Film Prepared by Reactive Magnetron Sputtering for Electrochromic Applications
por: Li, Ke-Ding, et al.
Publicado: (2018)