Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct waf...

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Detalles Bibliográficos
Autores principales: Lee, Youngseok, You, Yebin, Cho, Chulhee, Kim, Sijun, Lee, Jangjae, Kim, Minyoung, Lee, Hanglim, You, Youngjun, Kim, Kyungman, You, ShinJae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695507/
https://www.ncbi.nlm.nih.gov/pubmed/36363877
http://dx.doi.org/10.3390/mi13111856

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695507/
https://www.ncbi.nlm.nih.gov/pubmed/36363877
http://dx.doi.org/10.3390/mi13111856

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