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Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing

Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct waf...

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Autores principales: Lee, Youngseok, You, Yebin, Cho, Chulhee, Kim, Sijun, Lee, Jangjae, Kim, Minyoung, Lee, Hanglim, You, Youngjun, Kim, Kyungman, You, ShinJae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695507/
https://www.ncbi.nlm.nih.gov/pubmed/36363877
http://dx.doi.org/10.3390/mi13111856
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author Lee, Youngseok
You, Yebin
Cho, Chulhee
Kim, Sijun
Lee, Jangjae
Kim, Minyoung
Lee, Hanglim
You, Youngjun
Kim, Kyungman
You, ShinJae
author_facet Lee, Youngseok
You, Yebin
Cho, Chulhee
Kim, Sijun
Lee, Jangjae
Kim, Minyoung
Lee, Hanglim
You, Youngjun
Kim, Kyungman
You, ShinJae
author_sort Lee, Youngseok
collection PubMed
description Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths. In this work, we evaluate the various process steps of Si-SiO(2) wafer bonding through case-by-case experimental studies, covering factors including the plasma conditions for surface treatment and secondary factors such as the time intervals between some process steps. The results show that plasma treatment with increasing input power has a trade-off between bonding strengths and interfacial voids, requiring the optimization of the plasma conditions. It is also noticeable that the effects of plasma treatment on wafer bonding can be improved when the plasma-treated wafers are stored in ambient atmosphere before the subsequent process step, which may suggest that wafer exposure to air during the bonding process is advantageous compared to processing entirely in vacuum. The results are expected to allow plasma-assisted direct wafer bonding technology to play a bigger role in the packaging process of semiconductor device manufacturing.
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spelling pubmed-96955072022-11-26 Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing Lee, Youngseok You, Yebin Cho, Chulhee Kim, Sijun Lee, Jangjae Kim, Minyoung Lee, Hanglim You, Youngjun Kim, Kyungman You, ShinJae Micromachines (Basel) Article Direct wafer bonding is one of the most attractive techniques for next-generation semiconductor devices, and plasma has been playing an indispensable role in the wider adoption of the wafer bonding technique by lowering its process temperature. Although numerous studies on plasma-assisted direct wafer bonding have been reported, there is still a lack of deep investigations focusing on the plasma itself. Other than the plasma surface treatment, the wafer bonding process includes multiple steps such as surface cleaning and annealing that require comprehensive studies to maximize the bonding strengths. In this work, we evaluate the various process steps of Si-SiO(2) wafer bonding through case-by-case experimental studies, covering factors including the plasma conditions for surface treatment and secondary factors such as the time intervals between some process steps. The results show that plasma treatment with increasing input power has a trade-off between bonding strengths and interfacial voids, requiring the optimization of the plasma conditions. It is also noticeable that the effects of plasma treatment on wafer bonding can be improved when the plasma-treated wafers are stored in ambient atmosphere before the subsequent process step, which may suggest that wafer exposure to air during the bonding process is advantageous compared to processing entirely in vacuum. The results are expected to allow plasma-assisted direct wafer bonding technology to play a bigger role in the packaging process of semiconductor device manufacturing. MDPI 2022-10-29 /pmc/articles/PMC9695507/ /pubmed/36363877 http://dx.doi.org/10.3390/mi13111856 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lee, Youngseok
You, Yebin
Cho, Chulhee
Kim, Sijun
Lee, Jangjae
Kim, Minyoung
Lee, Hanglim
You, Youngjun
Kim, Kyungman
You, ShinJae
Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title_full Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title_fullStr Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title_full_unstemmed Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title_short Comprehensive Assessments in Bonding Energy of Plasma Assisted Si-SiO(2) Direct Wafer Bonding after Low Temperature Rapid Thermal Annealing
title_sort comprehensive assessments in bonding energy of plasma assisted si-sio(2) direct wafer bonding after low temperature rapid thermal annealing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695507/
https://www.ncbi.nlm.nih.gov/pubmed/36363877
http://dx.doi.org/10.3390/mi13111856
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