Cargando…
Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers
The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting...
Autores principales: | , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695674/ https://www.ncbi.nlm.nih.gov/pubmed/36432223 http://dx.doi.org/10.3390/nano12223937 |
_version_ | 1784838121199763456 |
---|---|
author | Wei, Wenwang Peng, Yi Yang, Yanlian Xiao, Kai Maraj, Mudassar Yang, Jia Wang, Yukun Sun, Wenhong |
author_facet | Wei, Wenwang Peng, Yi Yang, Yanlian Xiao, Kai Maraj, Mudassar Yang, Jia Wang, Yukun Sun, Wenhong |
author_sort | Wei, Wenwang |
collection | PubMed |
description | The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10(−3) cm(−2) for flat substrate AlN and 0.11 × 10(−3) cm(−2) for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 10(8) cm(−2) for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method. |
format | Online Article Text |
id | pubmed-9695674 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-96956742022-11-26 Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers Wei, Wenwang Peng, Yi Yang, Yanlian Xiao, Kai Maraj, Mudassar Yang, Jia Wang, Yukun Sun, Wenhong Nanomaterials (Basel) Article The high crystal quality and low dislocation densities of aluminum nitride (AlN) grown on flat and nano-patterned sapphire substrate that are synthesized by the metal-organic chemical vapor deposition (MOCVD) method are essential for the realization of high-efficiency deep ultraviolet light-emitting diodes. The micro-strains of 0.18 × 10(−3) cm(−2) for flat substrate AlN and 0.11 × 10(−3) cm(−2) for nano-patterned substrate AlN are obtained by X-ray diffractometer (XRD). The screw and edge dislocation densities of samples are determined by XRD and transmission electron microscope (TEM), and the results indicate that the nano-patterned substrates are effective in reducing the threading dislocation density. The mechanism of the variation of the threading dislocation in AlN films grown on flat and nano-patterned substrates is investigated comparatively. The etch pit density (EPD) determined by preferential chemical etching is about 1.04 × 10(8) cm(−2) for AlN grown on a nano-patterned substrate, which is slightly smaller than the results obtained by XRD and TEM investigation. Three types of etch pits with different sizes are all revealed on the AlN surface using the hot KOH etching method. MDPI 2022-11-08 /pmc/articles/PMC9695674/ /pubmed/36432223 http://dx.doi.org/10.3390/nano12223937 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Wei, Wenwang Peng, Yi Yang, Yanlian Xiao, Kai Maraj, Mudassar Yang, Jia Wang, Yukun Sun, Wenhong Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title | Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title_full | Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title_fullStr | Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title_full_unstemmed | Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title_short | Study of Defects and Nano-patterned Substrate Regulation Mechanism in AlN Epilayers |
title_sort | study of defects and nano-patterned substrate regulation mechanism in aln epilayers |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695674/ https://www.ncbi.nlm.nih.gov/pubmed/36432223 http://dx.doi.org/10.3390/nano12223937 |
work_keys_str_mv | AT weiwenwang studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT pengyi studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT yangyanlian studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT xiaokai studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT marajmudassar studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT yangjia studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT wangyukun studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers AT sunwenhong studyofdefectsandnanopatternedsubstrateregulationmechanisminalnepilayers |