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Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology
Resistivity and transparency of zinc-oxide layers (ZnO) for chalcopyrite photovoltaic technology applications were engineered by activation of the Burstein–Moss (BM) effect at high concentrations of aluminium (Al) and indium (In) dopant. The Al:ZnO and In:ZnO layers were processed by cost-effective,...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9695785/ https://www.ncbi.nlm.nih.gov/pubmed/36422396 http://dx.doi.org/10.3390/mi13111966 |