Engineering of Optical and Electrical Properties of Electrodeposited Highly Doped Al:ZnO and In:ZnO for Cost-Effective Photovoltaic Device Technology

Resistivity and transparency of zinc-oxide layers (ZnO) for chalcopyrite photovoltaic technology applications were engineered by activation of the Burstein–Moss (BM) effect at high concentrations of aluminium (Al) and indium (In) dopant. The Al:ZnO and In:ZnO layers were processed by cost-effective, large-area, fast-rate electrochemical deposition techniques from aqueous solution of zinc nitrate (Zn(NO(3))(2)) and dopant trichlorides, at negative electrochemical potential of E(C) = (−0.8)–(−1.2) V, moderate temperature of 80 °C, and solute dopant concentrations of AlCl(3) and InCl(3) up to 20 and 15 mM, respectively. Both Al:ZnO and In:ZnO layers were deposited on Mo/glass substrates with ZnO and ZnO/ZnSe buffers (Al:ZnO/ZnO/Mo/glass, In:ZnO/ZnO/ZnSe/Mo/glass), respectively. Based on the band-gap energy broadening of Al:ZnO and In:ZnO originated by the BM effect, maximum carrier concentrations of the order 10(20) and 10(21) cm(−3), respectively, were determined by optical characterization techniques. The (electrical) resistivity values of Al:ZnO calculated from optical measurements were commensurate with the results of electrical measurements (10(−4) Ohm·cm). In both cases (Al:ZnO and In:ZnO), calibration of carrier density in dependence of solute dopant concentration (AlCl(3) and InCl(3)) was accomplished. The p–n junctions of Au/In:ZnO/ZnO/ZnSe/CIGS/Mo on glass substrate exhibited current–voltage (I–V) characteristics competing with those of crystalline silicon (c-Si) solar cells.