Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage. Prior to the analysis of slant-gate-based HEMT, simulation parameters were extra...

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Detalles Bibliográficos
Autores principales: Lee, Jun-Ho, Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Min, Byoung-Gue, Kang, Dong Min, Choi, Jung Han, Kim, Hyun-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696902/
https://www.ncbi.nlm.nih.gov/pubmed/36422387
http://dx.doi.org/10.3390/mi13111957

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696902/
https://www.ncbi.nlm.nih.gov/pubmed/36422387
http://dx.doi.org/10.3390/mi13111957

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