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Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study

This study investigates the operational characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying a slant-gate structure and drain-side extended field-plate (FP) for improved breakdown voltage. Prior to the analysis of slant-gate-based HEMT, simulation parameters were extra...

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Detalles Bibliográficos
Autores principales:	Lee, Jun-Ho, Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Min, Byoung-Gue, Kang, Dong Min, Choi, Jung Han, Kim, Hyun-Seok
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9696902/ https://www.ncbi.nlm.nih.gov/pubmed/36422387 http://dx.doi.org/10.3390/mi13111957

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