Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors

In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and des...

Descripción completa

Detalles Bibliográficos
Autores principales: Choi, Woo Sik, Song, Min Suk, Kim, Hyungjin, Kim, Dae Hwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697067/
https://www.ncbi.nlm.nih.gov/pubmed/36363890
http://dx.doi.org/10.3390/mi13111870

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697067/
https://www.ncbi.nlm.nih.gov/pubmed/36363890
http://dx.doi.org/10.3390/mi13111870

Ejemplares similares