A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C

In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and...

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Detalles Bibliográficos
Autores principales: Peng, Cong, Huang, Huixue, Xu, Meng, Chen, Longlong, Li, Xifeng, Zhang, Jianhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697236/
https://www.ncbi.nlm.nih.gov/pubmed/36432306
http://dx.doi.org/10.3390/nano12224021

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697236/
https://www.ncbi.nlm.nih.gov/pubmed/36432306
http://dx.doi.org/10.3390/nano12224021

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