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A Simple Doping Process Achieved by Modifying the Passivation Layer for Self-Aligned Top-Gate In-Ga-Zn-O Thin-Film Transistors at 200 °C
In this paper, a facile modifying technique of source/drain regions conductivity was proposed for self-aligned top-gate In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) by controlling the process parameter of the passivation layer at relatively low temperatures. The sheet resistance of the source and...
Autores principales: | Peng, Cong, Huang, Huixue, Xu, Meng, Chen, Longlong, Li, Xifeng, Zhang, Jianhua |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697236/ https://www.ncbi.nlm.nih.gov/pubmed/36432306 http://dx.doi.org/10.3390/nano12224021 |
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