Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked...

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Detalles Bibliográficos
Autores principales: Marek, Juraj, Kozarik, Jozef, Minarik, Michal, Chvála, Aleš, Matus, Matej, Donoval, Martin, Stuchlikova, Lubica, Weis, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697379/
https://www.ncbi.nlm.nih.gov/pubmed/36431714
http://dx.doi.org/10.3390/ma15228230

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9697379/
https://www.ncbi.nlm.nih.gov/pubmed/36431714
http://dx.doi.org/10.3390/ma15228230

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