Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress

Silicon carbide (SiC) has been envisioned as an almost ideal material for power electronic devices; however, device reliability is still a great challenge. Here we investigate the reliability of commercial 1.2-kV 4H-SiC MOSFETs under repetitive unclamped inductive switching (UIS). The stress invoked degradation of the device characteristics, including the output and transfer characteristics, drain leakage current, and capacitance characteristics. Besides the shift of steady-state electrical characteristics, a significant change in switching times points out the charge trapping phenomenon. Transient capacitance spectroscopy was applied to investigate charge traps in the virgin device as well as after UIS stress. The intrinsic traps due to metal impurities or [Formula: see text] transitions were recognized in the virgin device. The UIS stress caused suppression of the second stage of the [Formula: see text] transition, and only the first stage, [Formula: see text] , was observed. Hence, the UIS stress is causing the reduction of multiple charging of carbon vacancies in SiC-based devices.