Bottom-Gated ZnO TFT Pressure Sensor with 1D Nanorods

In this study, a bottom-gated ZnO thin film transistor (TFT) pressure sensor with nanorods (NRs) is suggested. The NRs are formed on a planar channel of the TFT by hydrothermal synthesis for the mediators of pressure amplification. The fabricated devices show enhanced sensitivity by 16~20 times bett...

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Detalles Bibliográficos
Autores principales: Kim, Ki-Nam, Ko, Woon-San, Byun, Jun-Ho, Lee, Do-Yeon, Jeong, Jun-Kyo, Lee, Hi-Deok, Lee, Ga-Won
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698253/
https://www.ncbi.nlm.nih.gov/pubmed/36433504
http://dx.doi.org/10.3390/s22228907

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698253/
https://www.ncbi.nlm.nih.gov/pubmed/36433504
http://dx.doi.org/10.3390/s22228907

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