Comprehensive Analysis of Phosphorus-Doped Silicon Annealed by Continuous-Wave Laser Beam at High Scan Speed

We report an in-depth analysis of phosphorus (P)-doped silicon (Si) with a continuous-wave laser source using a high scan speed to increase the performance of semiconductor devices. We systematically characterized the P-doped Si annealed at different laser powers using four-point probe resistance me...

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Detalles Bibliográficos
Autores principales: Taiwo, Rasheed Ayinde, Shin, Joong-Han, Son, Yeong-Il
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698352/
https://www.ncbi.nlm.nih.gov/pubmed/36431371
http://dx.doi.org/10.3390/ma15227886

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9698352/
https://www.ncbi.nlm.nih.gov/pubmed/36431371
http://dx.doi.org/10.3390/ma15227886

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