Characterization of an Etch Profile at a Wafer Edge in Capacitively Coupled Plasma

Recently, the uniformity in the wafer edge area that is normally abandoned in the fabrication process has become important for improving the process yield. The wafer edge structure normally has a difference of height between wafer and electrode, which can result in a sheath bend, distorting importan...

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Detalles Bibliográficos
Autores principales: Seong, Inho, Lee, Jinho, Kim, Sijun, Lee, Youngseok, Cho, Chulhee, Lee, Jangjae, Jeong, Wonnyoung, You, Yebin, You, Shinjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9699281/
https://www.ncbi.nlm.nih.gov/pubmed/36432249
http://dx.doi.org/10.3390/nano12223963

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9699281/
https://www.ncbi.nlm.nih.gov/pubmed/36432249
http://dx.doi.org/10.3390/nano12223963

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