Strain-induced antipolar phase in hafnia stabilizes robust thin-film ferroelectricity

Hafnia (HfO(2)) is a promising candidate for next-generation ferroelectric devices due to its robust ferroelectricity at reduced dimensions and its compatibility with silicon technology. Unfortunately, the origin of robust ferroelectricity and the underlying phase transition mechanism in HfO(2) rema...

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Detalles Bibliográficos
Autores principales: Zhou, Songsong, Zhang, Jiahao, Rappe, Andrew M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2022
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9699663/
https://www.ncbi.nlm.nih.gov/pubmed/36427321
http://dx.doi.org/10.1126/sciadv.add5953

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9699663/
https://www.ncbi.nlm.nih.gov/pubmed/36427321
http://dx.doi.org/10.1126/sciadv.add5953

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