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Strain-induced antipolar phase in hafnia stabilizes robust thin-film ferroelectricity
Hafnia (HfO(2)) is a promising candidate for next-generation ferroelectric devices due to its robust ferroelectricity at reduced dimensions and its compatibility with silicon technology. Unfortunately, the origin of robust ferroelectricity and the underlying phase transition mechanism in HfO(2) rema...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Association for the Advancement of Science
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9699663/ https://www.ncbi.nlm.nih.gov/pubmed/36427321 http://dx.doi.org/10.1126/sciadv.add5953 |