Dry etching of ternary metal carbide TiAlC via surface modification using floating wire-assisted vapor plasma

Dry etching of ternary metal carbides TiAlC has been first developed by transferring from wet etching to dry etching using a floating wire (FW)-assisted Ar/ammonium hydroxide vapor plasma. FW-assisted non-halogen vapor plasma generated at medium pressure can produce high-density reactive radicals (N...

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Detalles Bibliográficos
Autores principales: Nguyen, Thi-Thuy-Nga, Shinoda, Kazunori, Hamamura, Hirotaka, Maeda, Kenji, Yokogawa, Kenetsu, Izawa, Masaru, Ishikawa, Kenji, Hori, Masaru
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9701795/
https://www.ncbi.nlm.nih.gov/pubmed/36437291
http://dx.doi.org/10.1038/s41598-022-24949-1

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9701795/
https://www.ncbi.nlm.nih.gov/pubmed/36437291
http://dx.doi.org/10.1038/s41598-022-24949-1

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